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| SUM110P06-07L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) () 0.0069 at VGS = - 10 V 0.0088 at VGS = - 4.5 V ID (A)d - 110 - 110 FEATURES * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance Available RoHS* COMPLIANT S TO-263 G G DS Top View D Ordering Information: SUM110P06-07L SUM110P06-07L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentd (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range a Symbol VDS VGS TC = 25 C TC = 125 C ID IDM L = 0.1 mH TC = 25 C TA = 25 Cb IAS EAS PD TJ, Tstg Limit - 60 20 - 110 - 95 - 240 - 75 281 375c 3.75 - 55 to 175 Unit V A mJ W C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72439 S-80274-Rev. C, 11-Feb-08 www.vishay.com 1 PCB Mount b Symbol RthJA RthJC Typical 40 0.4 Unit C/W SUM110P06-07L Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 60 V, VGS = 0 V, TJ = 125 C VDS = - 60 V, VGS = 0 V, TJ = 175 C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 30 A, TJ = 125 C VGS = - 10 V, ID = - 30 A, TJ = 175 C VGS = - 4.5 V, ID = - 20 A Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Timec c c Symbol Test Conditions Min. - 60 -1 Typ. Max. Unit -3 100 -1 - 50 - 250 V nA A A - 120 0.0055 0.0069 0.0115 0.0138 0.007 20 11400 0.0088 gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) VDS = - 15 V, ID = - 50 A S VGS = 0 V, VDS = - 25 V, f = 1 MHz 1200 900 230 345 pF VDS = - 30 V, VGS = - 10 V, ID = - 110 A f = 1.0 MHz VDD = - 30 V, RL = 0.27 ID - 110 A, VGEN = - 10 V, Rg = 2.5 50 60 3 20 160 200 240 30 240 300 360 - 110 - 240 nC Timec ns tf Fall Timec Source-Drain Diode Ratings and Characteristics TC = 25 Cb Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = - 85 A, di/dt = 100 A/s IF = - 85 A, VGS = 0 V A V ns A C - 1.0 65 - 4.2 0.14 -1.5 100 - 6.3 0.32 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72439 S-80274-Rev. C, 11-Feb-08 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 200 VGS = 10 thru 5 V 160 I D - Drain Current (A) I D - Drain Current (A) 4V 120 160 200 120 80 80 TC = 125 C 40 25 C - 55 C 0 40 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 250 TC = - 55 C g fs - Transconductance (S) 25 C 150 125 C 100 r DS(on) - On-Resistance () 200 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 0 15 30 45 60 75 90 0.000 0 20 Transfer Characteristics VGS = 4.5 V VGS = 10 V 50 40 60 80 100 120 ID - Drain Current (A) I D - Drain Current (A) Transconductance 14000 12000 10000 8000 6000 4000 Coss 2000 0 0 10 20 30 40 50 60 Crss Ciss 20 On-Resistance vs. Drain Current V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 110 A C - Capacitance (pF) 12 8 4 0 0 50 100 150 200 250 300 350 400 450 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72439 S-80274-Rev. C, 11-Feb-08 www.vishay.com 3 SUM110P06-07L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 VGS = 10 V ID = 30 A 1.7 rDS(on) - On-Resistance I S - Source Current (A) 100 (Normalized) 1.4 TJ = 150 C 10 TJ = 25 C 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 175 1 0.0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1000 75 Source-Drain Diode Forward Voltage ID = 250 A 72 100 V(BR)DSS (V) I Dav (A) 69 10 IAV (A) at TA = 25 C 66 1 IAV (A) at TA = 150 C 63 0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72439 S-80274-Rev. C, 11-Feb-08 SUM110P06-07L Vishay Siliconix THERMAL RATINGS 200 1000 Limited by rDS(on)* 10 s 150 Package Limited I D - Drain Current (A) I D - Drain Current (A) 100 100 s 100 10 1 ms 10 ms 100 ms, DC 50 1 TC = 25 C Single Pulse 0 0 25 50 75 100 125 150 175 0.1 0.1 * VGS 1 10 100 TC - Case Temperature (C) Maximum Avalanche and Drain Current vs. Case Temperature 1 Duty Cycle = 0.5 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 Single Pulse t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72439. Document Number: 72439 S-80274-Rev. C, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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